|
SEMI D13 |
TERMINOLOGY FOR FPD COLOR FILTER ASSEMBLIES |
|
SEMI D46 |
Terminology for FPD Polarizing Films |
|
SEMI D9 |
TERMINOLOGY FOR FPD SUBSTRATES |
|
SEMI D36 |
TERMINOLOGY FOR LCD BACKLIGHT UNIT |
|
SEMI P35 |
TERMINOLOGY FOR MICROLITHOGRAPHY METROLOGY |
|
SEMI MF1153 |
TEST METHOD FOR CHARACTERIZATION OF METAL-OXIDE-SILICON (MOS) STRUCTURES BY CAPACITANCE-VOLTAGE MEASUREMENTS |
|
SEMI P32 |
TEST METHOD FOR DETERMINATION OF TRACE METALS IN PHOTORESIST |
|
SEMI E80 |
TEST METHOD FOR DETERMINING ATTITUDE SENSITIVITY OF MASS FLOW CONTROLLERS (MOUNTING POSITION) |
|
SEMI MF1392 |
TEST METHOD FOR DETERMINING NET CARRIER DENSITY PROFILES IN SILICON WAFERS BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY PROBE |
|
SEMI E66 |
TEST METHOD FOR DETERMINING PARTICLE CONTRIBUTION BY MASS FLOW CONTROLLERS |
|
SEMI F64 |
TEST METHOD FOR DETERMINING PRESSURE EFFECTS ON INDICATED AND ACTUAL FLOW FOR MASS FLOW CONTROLLERS |
|
SEMI E67 |
TEST METHOD FOR DETERMINING RELIABILITY OF MASS FLOW CONTROLLER |
|
SEMI E115 |
TEST METHOD FOR DETERMINING THE LOAD IMPEDANCE AND EFFICIENCY OF MATCHING NETWORKS USED IN SEMICONDUCTOR PROCESSING EQUIPMENT RF POWER DELIVERY SYSTEMS |
|
SEMI E136 |
TEST METHOD FOR DETERMINING THE OUTPUT POWER OF RF GENERATORS USED IN SEMICONDUCTOR PROCESSING EQUIPMENT RF POWER DELIVERY SYSTEMS |
|
SEMI F77 |
TEST METHOD FOR ELECTROCHEMICAL CRITICAL PITTING TEMPERATURE TESTING OF ALLOY SURFACES USED IN CORROSIVE GAS SYSTEMS |
|
SEMI F8 |
TEST METHOD FOR EVALUATING THE SEALING CAPABILITIES OF TUBE FITTING CONNECTIONS MADE OF FLUOROCARBON MATERIALS, WHEN SUBJECTED TO TENSILE FORCES |
|
SEMI D30 |
TEST METHOD FOR LIGHT RESISTANCE IN FLAT PANEL DISPLAY (FPD) COLOR FILTERS |
|
SEMI G69 |
TEST METHOD FOR MEASUREMENT OF ADHESIVE STRENGTH BETWEEN LEADFRAMES AND MOLDING COMPOUNDS |
|
SEMI D35 |
TEST METHOD FOR MEASUREMENT OF COLD CATHODE FLUORESCENT LAMP (CCFL) CHARACTERISTICS |
|
SEMI G59 |
TEST METHOD FOR MEASUREMENT OF IONIC CONTAMINATION ON LEADFRAME INTERLEAFING AND THE CONTAMINATION TRANSFERRED FROM THE INTERLEAFING TO THE LEADFRAMES |
|
SEMI MF2139 |
TEST METHOD FOR MEASURING NITROGEN CONCENTRATION IN SILICON SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY |
|
SEMI F28 |
TEST METHOD FOR MEASURING PARTICLE GENERATION FROM PROCESS PANELS |
|
SEMI E143 |
TEST METHOD FOR MEASURING POWER VARIATION INTO A 50-O LOAD AND POWER VARIATION AND SPECTRUM INTO A LOAD WITH A VSWR OF 2.0 AT ANY PHASE ANGLE |
|
SEMI MF525 |
TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS USING A SPREADING RESISTANCE PROBE |
|
SEMI MF1451 |
TEST METHOD FOR MEASURING SORI ON SILICON WAFERS BY AUTOMATED NON-CONTACT SCANNING |
|
SEMI MF1617 |
TEST METHOD FOR MEASURING SURFACE SODIUM, ALUMINUM, POTASSIUM, AND IRON ON SILICON AND EPI SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY |
|
SEMI G73 |
TEST METHOD FOR PULL STRENGTH FOR WIRE BONDING |
|
SEMI G6 |
TEST METHOD FOR SEAL RING FLATNESS |
|
SEMI MF1391 |
TEST METHOD FOR SUBSTITUTIONAL ATOMIC CARBON CONTENT OF SILICON BY INFRARED ABSORPTION |
|
SEMI D50 |
TEST METHOD FOR SURFACE HARDNESS OF FPD POLARIZING FILM |
|
SEMI M33 |
TEST METHOD FOR THE DETERMINATION OF RESIDUAL SURFACE CONTAMINATION ON SILICON WAFERS BY MEANS OF TOTAL REFLECTION X-RAY FLUORESCENCE SPECTROSCOPY (TXRF) |
|
SEMI G60 |
TEST METHOD FOR THE MEASUREMENT OF ELECTROSTATIC PROPERTIES OF SEMICONDUCTOR LEADFRAME INTERLEAFING MATERIALS |
|
SEMI G67 |
TEST METHOD FOR THE MEASUREMENT OF PARTICLE GENERATION FROM SHEET MATERIALS |
|
SEMI G66 |
TEST METHOD FOR THE MEASUREMENT OF WATER ABSORPTION CHARACTERISTICS FOR SEMICONDUCTOR PLASTIC MOLDING COMPOUNDS |
|
SEMI F74 |
TEST METHOD FOR THE PERFORMANCE AND EVALUATION OF METAL SEAL DESIGNS FOR USE IN GAS DELIVERY SYSTEMS |
|
SEMI MF533 |
TEST METHOD FOR THICKNESS AND THICKNESS VARIATION OF SILICON WAFERS |
|
SEMI G29 |
TEST METHOD FOR TRACE CONTAMINANTS IN MOLDING COMPOUNDS |
|
SEMI M66 |
TEST METHOD TO EXTRACT EFFECTIVE WORK FUNCTION IN OXIDE AND HIGH-? GATE STACKS USING THE MIS FLAT BAND VOLTAGE-INSULATOR THICKNESS TECHNIQUE |
|
SEMI MF1982 |
TEST METHODS FOR ANALYZING ORGANIC CONTAMINANTS ON SILICON WAFER SURFACES BY THERMAL DESORPTION GAS CHROMATOGRAPHY |
|
SEMI M50 |
TEST METHODS FOR DETERMINING CAPTURE RATE AND FALSE COUNT RATE FOR SURFACE SCANNING INSPECTION SYSTEMS BY THE OVERLAY METHOD |
|
SEMI F101 |
TEST METHODS FOR DETERMINING PRESSURE REGULATOR PERFORMANCE IN GAS DISTRIBUTION SYSTEMS |
|
SEMI MF1152 |
TEST METHODS FOR DIMENSIONS OF NOTCHES ON SILICON WAFERS |
|
SEMI MF928 |
TEST METHODS FOR EDGE CONTOUR OF CIRCULAR SEMICONDUCTOR WAFERS AND RIGID DISK SUBSTRATES |
|
SEMI MF1763 |
TEST METHODS FOR MEASURING CONTRAST OF A LINEAR POLARIZER |
|
SEMI MF847 |
TEST METHODS FOR MEASURING CRYSTALLOGRAPHIC ORIENTATION OF FLATS ON SINGLE CRYSTAL SILICON WAFERS BY X-RAY TECHNIQUES |
|
SEMI MF673 |
TEST METHODS FOR MEASURING RESISTIVITY OF SEMICONDUCTOR WAFERS OR SHEET RESISTANCE OF SEMICONDUCTOR FILMS WITH A NONCONTACT EDDY-CURRENT GAUGE |
|
SEMI MF391 |
TEST METHODS FOR MINORITY CARRIER DIFFUSION LENGTH IN EXTRINSIC SEMICONDUCTORS BY MEASUREMENT OF STEADYSTATE SURFACE PHOTOVOLTAGE |
|
SEMI E38 |
CLUSTER TOOL MODULE COMMUNICATIONS (CTMC) |
|
SEMI E20 |
CLUSTER TOOL MODULE INTERFACE: ELECTRICAL POWER AND EMERGENCY OFF STANDARD |
|
SEMI P11 |
DETERMINATION OF TOTAL NORMALITY FOR ALKALINE DEVELOPER SOLUTIONS |
|
SEMI F52 |
DIMENSIONAL SPECIFICATION FOR METRIC PFA TUBES FOR LIQUID CHEMICAL DISTRIBUTION IN SEMICONDUCTOR AND FLAT PANEL DISPLAY MANUFACTURING |
|
SEMI F65 |
DIMENSIONAL SPECIFICATION FOR MOUNTING BASES OF DIAPHRAGM VALVES USED WITH METRIC PFA TUBES |
|
SEMI S13 |
ENVIRONMENTAL, HEALTH AND SAFETY GUIDELINE FOR DOCUMENTS PROVIDED TO THE EQUIPMENT USER FOR USE WITH SEMICONDUCTOR MANUFACTURING EQUIPMENT |
|
SEMI E53 |
EVENT REPORTING |
|
SEMI E30 |
GENERIC MODEL FOR COMMUNICATIONS AND CONTROL OF MANUFACTURING EQUIPMENT (GEM) |
|
SEMI M17 |
GUIDE FOR A UNIVERSAL WAFER GRID |
|
SEMI F31 |
GUIDE FOR BULK CHEMICAL DISTRIBUTION SYSTEMS |
|
SEMI E96 |
GUIDE FOR CIM FRAMEWORK TECHNICAL ARCHITECTURE |
|
SEMI D23 |
GUIDE FOR COST OF EQUIPMENT OWNERSHIP (CEO) CALCULATION FOR FPD EQUIPMENT |
|
SEMI E124 |
GUIDE FOR DEFINITION AND CALCULATION OF OVERALL FACTORY EFFICIENCY (OFE) AND OTHER ASSOCIATED FACTORY-LEVEL PRODUCTIVITY METRICS |
|
SEMI E147 |
GUIDE FOR EQUIPMENT DATA ACQUISITION (EDA) |
|
SEMI M40 |
GUIDE FOR MEASUREMENT OF SURFACE ROUGHNESS OF PLANAR SURFACES ON SILICON WAFER |
|
SEMI F105 |
GUIDE FOR METALLIC MATERIAL COMPATIBILITY IN GAS DISTRIBUTION SYSTEMS |
|
SEMI M49 |
GUIDE FOR SPECIFYING GEOMETRY MEASUREMENT SYSTEMS FOR SILICON WAFERS FOR THE 130-nm TO 65-nm TECHNOLOGY GENERATIONS |
|
SEMI M44 |
GUIDE TO CONVERSION FACTORS FOR INTERSTITIAL OXYGEN IN SILICON |
|
SEMI MS1 |
GUIDE TO SPECIFYING WAFER-WAFER BONDING ALIGNMENT TARGETS |
|
SEMI F39 |
GUIDELINE FOR CHEMICAL BLENDING SYSTEMS |
|
SEMI P9 |
GUIDELINE FOR FUNCTIONAL TESTING OF MICROELECTRONIC RESISTS |
|
SEMI E110 |
GUIDELINE FOR INDICATOR PLACEMENT ZONE AND SWITCH PLACEMENT VOLUME OF LOAD PORT OPERATION INTERFACE FOR 300 mm LOAD PORTS |
|
SEMI E34 |
GUIDELINE FOR MASS FLOW DEVICE RETURN |
|
SEMI C63 |
GUIDELINE FOR ORGANOSILICATE PRECURSORS USED IN LOW K CVD PROCESSES |
|
SEMI G14 |
GUIDELINE FOR SPECIFYING THE DIMENSIONS AND TOLERANCES USED TO MANUFACTURE PLASTIC MOLDED DIP PACKAGE TOOLING |
|
SEMI E18 |
GUIDELINE FOR TEMPERATURE SPECIFICATIONS OF THE MASS FLOW CONTROLLER |
|
SEMI P21 |
GUIDELINES FOR PRECISION AND ACCURACY EXPRESSION FOR MASK WRITING EQUIPMENT |
|
SEMI P23 |
GUIDELINES FOR PROGRAMMED DEFECT MASKS AND BENCHMARK PROCEDURES FOR SENSITIVITY ANALYSIS OF MASK DEFECT INSPECTION SYSTEMS |
|
SEMI F63 |
GUIDELINES FOR ULTRAPURE WATER USED IN SEMICONDUCTOR PROCESSING |
|
SEMI D41 |
MEASUREMENT METHOD OF SEMI MURA IN FPD IMAGE QUALITY INSPECTION |
|
SEMI E1.9 |
MECHANICAL SPECIFICATION FOR CASSETTES USED TO TRANSPORT AND STORE 300 mm WAFERS |
|
SEMI F37 |
METHOD FOR DETERMINATION OF SURFACE ROUGHNESS PARAMETERS FOR GAS DISTRIBUTION SYSTEM COMPONENTS |
|
SEMI P26 |
PARAMETER CHECKLIST FOR PHOTORESIST SENSITIVITY MEASUREMENT |
|
SEMI P27 |
PARAMETER CHECKLIST FOR RESIST THICKNESS MEASUREMENT ON A SUBSTRATE |
|
SEMI F23 |
PARTICLE SPECIFICATION FOR GRADE 10/0.2 FLAMMABLE SPECIALTY GASES |
|
SEMI F24 |
PARTICLE SPECIFICATION FOR GRADE 10/0.2 INERT SPECIALTY GASES |
|
SEMI MF1726 |
PRACTICE FOR ANALYSIS OF CRYSTALLOGRAPHIC PERFECTION OF SILICON WAFERS |
|
SEMI M53 |
PRACTICE FOR CALIBRATING SCANNING SURFACE INSPECTION SYSTEMS USING CERTIFIED DEPOSITIONS OF MONODISPERSE POLYSTYRENE LATEX SPHERES ON UNPATTERNED SEMICONDUCTOR WAFER SURFACES |
|
SEMI MF723 |
PRACTICE FOR CONVERSION BETWEEN RESISTIVITY AND DOPANT OR CARRIER DENSITY FOR BORON-DOPED, PHOSPHORUS-DOPED, AND ARSENIC-DOPED SILICON |
|
SEMI MF1727 |
PRACTICE FOR DETECTION OF OXIDATION INDUCED DEFECTS IN POLISHED SILICON WAFERS |
|
SEMI MF1618 |
PRACTICE FOR DETERMINATION OF UNIFORMITY OF THIN FILMS ON SILICON WAFERS |
|
SEMI M70 |
PRACTICE FOR DETERMINING WAFER-NEAR-EDGE GEOMETRY USING PARTIAL WAFER SITE FLATNESS |
|
SEMI MF1049 |
PRACTICE FOR SHALLOW ETCH PIT DETECTION ON SILICON WAFERS |
|
SEMI E133 |
PROVISIONAL SPECIFICATION FOR AUTOMATED PROCESS CONTROL SYSTEMS INTERFACE |
|
SEMI E98 |
PROVISIONAL STANDARD FOR THE OBJECT- BASED EQUIPMENT MODEL (OBEM) |
|
SEMI D3 |
QUALITY AREA SPECIFICATION FOR FLAT PANEL DISPLAY SUBSTRATES |
|
SEMI G11 |
RECOMMENDED PRACTICE FOR RAM FOLLOWER GEL TIME AND SPIRAL FLOW OF THERMAL SETTING MOLDING COMPOUNDS |
|
SEMI S10 |
SAFETY GUIDELINE FOR RISK ASSESSMENT AND RISK EVALUATION PROCESS |
|
SEMI S5 |
SAFETY GUIDELINE FOR SIZING AND IDENTIFYING FLOW LIMITING DEVICES FOR GAS CYLINDER VALVES |
|
SEMI S22 REV A |
SAFETY GUIDELINE FOR THE ELECTRICAL DESIGN OF SEMICONDUCTOR MANUFACTURING EQUIPMENT |
|
SEMI S15 |
SAFETY GUIDELINE FOR THE EVALUATION OF TOXIC AND FLAMMABLE GAS DETECTION SYSTEMS |
|
SEMI S4 |
SAFETY GUIDELINE FOR THE SEPARATION OF CHEMICAL CYLINDERS CONTAINED IN DISPENSING CABINETS |
|
SEMI S8 |
SAFETY GUIDELINES FOR ERGONOMICS ENGINEERING OF SEMICONDUCTOR MANUFACTURING EQUIPMENT |
|
SEMI E36 |
SEMICONDUCTOR EQUIPMENT MANUFACTURING INFORMATION TAGGING SPECIFICATION |
|
SEMI C34 |
SPECIFICATION AND GUIDELINE FOR MIXED ACID ETCHANTS |
|
SEMI P34 |
SPECIFICATION FOR 230 mm SQUARE PHOTOMASK SUBSTRATES |
|
SEMI E64 |
SPECIFICATION FOR 300 mm CART TO SEMI E15.1 DOCKING INTERFACE PORT |
|
SEMI E92 |
SPECIFICATION FOR 300 mm LIGHT WEIGHT AND COMPACT BOX OPENER/LOADER TO TOOL-INTEROPERABILITY STANDARD (BOLTS/LIGHT) |
|
SEMI M29 |
SPECIFICATION FOR 300 mm SHIPPING BOX |
|
SEMI E15.1 |
SPECIFICATION FOR 300 mm TOOL LOAD PORT |
|
SEMI P38 |
SPECIFICATION FOR ABSORBING FILM STACKS AND MULTILAYERS ON EXTREME ULTRAVIOLET LITHOGRAPHY MASK BLANKS |
|
SEMI E88 |
SPECIFICATION FOR AMHS STORAGE SEM (STOCKER SEM) |
|
SEMI G39 |
SPECIFICATION FOR BRAZED LEAD FLATPACK CONSTRUCTIONS, INCLUDING LEADFRAMES, SUITABLE FOR AUTOMATED ASSEMBLY |
|
SEMI E87 |
SPECIFICATION FOR CARRIER MANAGEMENT (CMS) |
|
SEMI E23 |
SPECIFICATION FOR CASSETTE TRANSFER PARALLEL I/O INTERFACE |
|
SEMI C3.32 |
SPECIFICATION FOR CHLORINE (Cl2), 99.996% QUALITY |
|
SEMI C25 |
SPECIFICATION FOR DICHLOROMETHANE (METHYLENE CHLORIDE) |
|
SEMI F89 |
SPECIFICATION FOR DIMENSION OF COMPACT SIZE MASS FLOW CONTROLLERS AND MASS FLOW METERS FOR 1.5 INCH TYPE SURFACE MOUNT GAS DISTRIBUTION SYSTEMS |
|
SEMI F91 |
SPECIFICATION FOR DIMENSION OF COMPACT SIZE TWO PORT COMPONENTS (EXCEPT MFC/MFM) FOR 1.5 INCH TYPE TWO FASTENER CONFIGURATION SURFACE MOUNT GAS DISTRIBUTION SYSTEMS |
|
SEMI F82 |
SPECIFICATION FOR DIMENSION OF MASS FLOW CONTROLLER / MASS FLOW METER FOR 1.125 INCH TYPE SURFACE MOUNT GAS DISTRIBUTION SYSTEMS |
|
SEMI F95 |
SPECIFICATION FOR DIMENSION OF THREE PORT COMPONENTS FOR 1.5 INCH FOUR FASTENER CONFIGURATION TYPE SURFACE MOUNT GAS DISTRIBUTION SYSTEMS |
|
SEMI F94 |
SPECIFICATION FOR DIMENSION OF TWO PORT COMPONENTS (EXCEPT MFC/MFM) FOR 1.5 INCH FOUR FASTENER CONFIGURATION TYPE SURFACE MOUNT GAS DISTRIBUTION SYSTEMS |
|
SEMI E31 |
SPECIFICATION FOR ELECTRICAL INTERFACE, JAPAN ONLY |
|
SEMI F97 |
SPECIFICATION FOR FACILITY PACKAGE INTEGRATION, MONITORING AND CONTROL |
|
SEMI D25 |
SPECIFICATION FOR FLAT PANEL DISPLAY SUBSTRATE SHIPPING CASE |
|
SEMI D24 |
SPECIFICATION FOR GLASS SUBSTRATES USED TO MANUFACTURE FLAT PANEL DISPLAYS |
|
SEMI G26 |
SPECIFICATION FOR HERMETIC SLAM CHIP CARRIER LIDS |
|
SEMI C3.47 |
SPECIFICATION FOR HYDROGEN BROMIDE (HBr), 99.98% QUALITY |
|
SEMI M14 |
SPECIFICATION FOR ION IMPLANTATION AND ACTIVATION PROCESS FOR SEMI-INSULATING GALLIUM ARSENIDE SINGLE CRYSTALS |
|
SEMI P45 |
SPECIFICATION FOR JOB DECK DATA FORMAT FOR VSB MASK WRITERS |
|
SEMI G27 |
SPECIFICATION FOR LEADFRAMES FOR PLASTIC LEADED CHIP CARRIER (PLCC) PACKAGES |
|
SEMI D6 |
SPECIFICATION FOR LIQUID CRYSTAL DISPLAY (LCD) MASK SUBSTRATES |
|
SEMI D39 |
SPECIFICATION FOR MARKERS ON FPD POLARIZING FILMS |
|
SEMI T2 |
SPECIFICATION FOR MARKING OF WAFERS WITH A TWO-DIMENSIONAL MATRIX CODE SYMBOL |
|
SEMI G48 |
SPECIFICATION FOR MEASUREMENT METHOD FOR MOLDED PLASTIC PACKAGE TOOLING |
|
SEMI P25 |
SPECIFICATION FOR MEASURING DEPTH OF FOCUS AND BEST FOCUS |
|
SEMI P44 |
SPECIFICATION FOR OPEN ARTWORK SYSTEM INTERCHANGE STANDARD (OASISTM) SPECIFIC TO VSB MASK WRITERS |
|
SEMI G49 |
SPECIFICATION FOR PLASTIC MOLDING PREFORMS |
|
SEMI F4 |
SPECIFICATION FOR PNEUMATICALLY ACTUATED CYLINDER VALVES |
|
SEMI M55 |
SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON CARBIDE WAFERS |
|
SEMI M38 |
SPECIFICATION FOR POLISHED RECLAIMED SILICON WAFERS |
|
SEMI M16 |
SPECIFICATION FOR POLYCRYSTALLINE SILICON |
|
SEMI E91 |
SPECIFICATION FOR PROBER SPECIFIC EQUIPMENT MODEL (PSEM) |
|
SEMI P6 |
SPECIFICATION FOR REGISTRATION MARKS FOR PHOTOMASKS |
|
SEMI E117 |
SPECIFICATION FOR RETICLE LOAD PORT |
|
SEMI M12 |
SPECIFICATION FOR SERIAL ALPHANUMERIC MARKING OF THE FRONT SURFACE OF WAFERS |
|
SEMI M71 |
SPECIFICATION FOR SILICON-ON-INSULATOR (SOI) WAFERS FOR CMOS LSI 130 nm TECHNOLOGY GENERATION AND BEYOND |
|
SEMI F103 |
SPECIFICATION FOR SIZE RANGES OF STAINLESS STEEL CANISTERS TO CONTAIN LIQUID CHEMICALS |
|
SEMI C42 |
SPECIFICATION FOR SODIUM HYDROXIDE PELLETS |
|
SEMI C52 |
SPECIFICATION FOR THE SHELF LIFE OF A SPECIALTY GAS |
|
SEMI C3.26 |
SPECIFICATION FOR TUNGSTEN HEXAFLUORIDE (WF6) IN CYLINDERS, 99.8% QUALITY |
|
SEMI D42 |
SPECIFICATION FOR ULTRA LARGE SIZE MASK SUBSTRATE CASE |
|
SEMI E73 |
SPECIFICATION FOR VACUUM PUMP INTERFACES - DRY PUMPS |
|
SEMI T3 |
SPECIFICATION FOR WAFER BOX LABELS |
|
SEMI E118 |
SPECIFICATION FOR WAFER ID READER COMMUNICATION INTERFACE — THE WAFER ID READER FUNCTIONAL STANDARD: CONCEPTS, BEHAVIOR AND SERVICE |
|
SEMI P42 |
SPECIFICATION OF RETICLE DATA FOR AUTOMATIC RECIPE TRANSFER TO WAFER EXPOSURE SYSTEM |
|
SEMI D49 |
SPECIFICATION OF SINGLE SUBSTRATE ORIENTATION FOR LOADING/UNLOADING INTO/FROM EQUIPMENT TO SPECIFY ID READER POSITION |
|
SEMI C48 |
SPECIFICATIONS AND GUIDELINES FOR 1,1,1-TRICHLOROETHANE*, FURNACE GRADE |
|
SEMI C27 |
SPECIFICATIONS AND GUIDELINES FOR HYDROCHLORIC ACID |
|
SEMI C60 |
SPECIFICATIONS AND GUIDELINES FOR NITROUS OXIDE (N2O) |
|
SEMI C44 |
SPECIFICATIONS AND GUIDELINES FOR SULFURIC ACID |
|
SEMI C49 |
SPECIFICATIONS AND GUIDELINES FOR TRIMETHYLBORATE |
|
SEMI C3.39 |
STANDARD FOR NITROGEN TRIFLUORIDE (NF3) |
|
SEMI E12 |
STANDARD FOR STANDARD PRESSURE, TEMPERATURE, DENSITY, AND FLOW UNITS USED IN MASS FLOW METERS AND MASS FLOW CONTROLLERS |
|
SEMI M30 |
STANDARD TEST METHOD FOR SUBSTITUTIONAL ATOMIC CARBON CONCENTRATION IN GaAs BY FOURIER TRANSFORM INFRARED ABSORPTION SPECTROSCOPY |
|
SEMI G75 |
STANDARD TEST METHOD OF THE PROPERTIES OF LEADFRAME TAPE |
|
SEMI MS3 |
TERMINOLOGY FOR MEMS TECHNOLOGY |
|
SEMI MF534 |
TEST METHOD FOR BOW OF SILICON WAFERS |
|
SEMI MF1535 |
TEST METHOD FOR CARRIER RECOMBINATION LIFETIME IN SILICON WAFERS BY NON-CONTACT MEASUREMENT OF PHOTOCONDUCTIVITY DECAY BY MICROWAVE REFLECTANCE |
|
SEMI MF978 |
TEST METHOD FOR CHARACTERIZING SEMICONDUCTOR DEEP LEVELS BY TRANSIENT CAPACITANCE TECHNIQUES |
|
SEMI G78 |
TEST METHOD FOR COMPARING AUTOMATED WAFER PROBE SYSTEMS UTILIZING PROCESS-SPECIFIC MEASUREMENTS |
|
SEMI MF1810 |
TEST METHOD FOR COUNTING PREFERENTIALLY ETCHED OR DECORATED SURFACE DEFECTS IN SILICON WAFERS |
|
SEMI F32 |
TEST METHOD FOR DETERMINATION OF FLOW COEFFICIENT FOR HIGH PURITY SHUTOFF VALVES |
|
SEMI E56 |
TEST METHOD FOR DETERMINING ACCURACY, LINEARITY, REPEATABILITY, SHORT-TERM REPRODUCIBILITY, HYSTERESIS, AND DEADBAND OF THERMAL MASS FLOW CONTROLLERS |
|
SEMI E69 |
TEST METHOD FOR DETERMINING REPRODUCIBILITY AND ZERO DRIFT FOR THERMAL MASS FLOW CONTROLLERS |
|
SEMI G31 |
TEST METHOD FOR DETERMINING THE ABRASIVE CHARACTERISTICS OF MOLDING COMPOUNDS |
|
SEMI F48 |
TEST METHOD FOR DETERMINING TRACE METALS IN POLYMER MATERIALS |
|
SEMI E68 |
TEST METHOD FOR DETERMINING WARM-UP TIME OF MASS FLOW CONTROLLERS |
|
SEMI F60 |
TEST METHOD FOR ESCA EVALUATION OF SURFACE COMPOSITION OF WETTED SURFACES OF PASSIVATED 316L STAINLESS STEEL COMPONENTS |
|
SEMI P47 |
TEST METHOD FOR EVALUATION OF LINE-EDGE ROUGHNESS AND LINEWIDTH ROUGHNESS |
|
SEMI MF1630 |
TEST METHOD FOR LOW TEMPERATURE FT-IR ANALYSIS OF SINGLE CRYSTAL SILICON FOR III-V IMPURITIES |
|
SEMI MF398 |
TEST METHOD FOR MAJORITY CARRIER CONCENTRATION IN SEMICONDUCTORS BY MEASUREMENT OF WAVENUMBER OR WAVELENGTH OF THE PLASMA RESONANCE MINIMUM |
|
SEMI MF1528 |
TEST METHOD FOR MEASURING BORON CONTAMINATION IN HEAVILY DOPED n-TYPE SILICON SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY |
|
SEMI M46 |
TEST METHOD FOR MEASURING CARRIER CONCENTRATIONS IN EPITAXIAL LAYER STRUCTURES BY ECV PROFILING |
|
SEMI M36 |
TEST METHOD FOR MEASURING ETCH PIT DENSITY (EPD) IN LOW DISLOCATION DENSITY GALLIUM ARSENIDE WAFERS |
|
SEMI M37 |
TEST METHOD FOR MEASURING ETCH PIT DENSITY (EPD) IN LOW DISLOCATION DENSITY INDIUM PHOSPHIDE WAFERS |
|
SEMI MF1530 |
TEST METHOD FOR MEASURING FLATNESS, THICKNESS, AND TOTAL THICKNESS VARIATION ON SILICON WAFERS BY AUTOMATED NON-CONTACT SCANNING |
|
SEMI MF1048 |
TEST METHOD FOR MEASURING REFLECTIVE TOTAL INTEGRATED SCATTER |
|
SEMI MF84 |
TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE |
|
SEMI MF1724 |
TEST METHOD FOR MEASURING SURFACE METAL CONTAMINATION OF POLYCRYSTALLINE SILICON BY ACID EXTRACTION-ATOMIC ABSORPTION SPECTROSCOPY |
|
SEMI MF657 |
TEST METHOD FOR MEASURING WARP AND TOTAL THICKNESS VARIATION ON SILICON WAFERS BY NONCONTACT SCANNING |
|
SEMI F27 |
TEST METHOD FOR MOISTURE INTERACTION AND CONTENT OF GAS DISTRIBUTION SYSTEMS AND COMPONENTS BY ATMOSPHERIC PRESSURE IONIZATION MASS SPECTROMETRY (APIMS) |
|
SEMI C14 |
TEST METHOD FOR PARTICLE SHEDDING PERFORMANCE OF 25 cm GAS FILTER CARTRIDGES |
|
SEMI E135 |
TEST METHOD FOR RF GENERATORS TO DETERMINE TRANSIENT RESPONSE FOR RF POWER DELIVERY SYSTEMS USED IN SEMICONDUCTOR PROCESSING EQUIPMENT |
|
SEMI D19 |
TEST METHOD FOR THE DETERMINATION OF CHEMICAL RESISTANCE OF FLAT PANEL DISPLAY COLOR FILTERS |
|
SEMI E46 |
TEST METHOD FOR THE DETERMINATION OF ORGANIC CONTAMINATION FROM MINIENVIRONMENTS USING ION MOBILITY SPECTROMETRY (IMS) |
|
SEMI MF110 |
TEST METHOD FOR THICKNESS OF EPITAXIAL OR DIFFUSED LAYERS IN SILICON BY THE ANGLE LAPPING AND STAINING TECHNIQUE |
|
SEMI F35 |
TEST METHOD FOR ULTRA-HIGH PURITY GAS DISTRIBUTION SYSTEM INTEGRATION VERIFICATION USING NON-INVASIVE OXYGEN MEASUREMENT |
|
SEMI F9 |
TEST METHOD TO DETERMINE THE LEAKAGE CHARACTERISTICS OF TUBE FITTING CONNECTIONS MADE OF FLUOROCARBON MATERIALS, WHEN SUBJECTED TO A SIDE LOAD CONDITION |
|
SEMI F12 |
TEST METHOD TO DETERMINE THE SEALING CAPABILITIES OF FITTINGS, MADE OF FLUOROCARBON MATERIAL, AFTER BEING SUBJECTED TO A HEAT CYCLE |
|
SEMI F7 |
TEST METHOD TO DETERMINE THE TENSILE STRENGTH OF TUBE FITTING CONNECTIONS MADE OF FLUOROCARBON MATERIALS |
|
SEMI MF28 |
TEST METHODS FOR MINORITY CARRIER LIFETIME IN BULK GERMANIUM AND SILICON BY MEASUREMENT OF PHOTOCONDUCTIVITY DECAY |
|
SEMI F69 |
TEST METHODS FOR TRANSPORT AND SHOCK TESTING OF GAS DELIVERY SYSTEMS |
|
SEMI E19.4 |
200 mm STANDARD MECHANICAL INTERFACE (SMIF) |
|
SEMI E145 |
CLASSIFICATION FOR MEASUREMENT UNIT SYMBOLS IN XML |
|
SEMI E22 |
CLUSTER TOOL MODULE INTERFACE: TRANSPORT MODULE END EFFECTOR EXCLUSION VOLUME STANDARD |
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SEMI P17 |
DETERMINATION OF IRON, ZINC, CALCIUM, MAGNESIUM, COPPER, BORON, ALUMINUM, CHROMIUM, MANGANESE, AND NICKEL IN POSITIVE PHOTORESIST METAL ION FREE (MIF) DEVELOPERS BY INDUCTIVELY COUPLED PLASMA EMISSION SPECTROSCOPY (ICP) |
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SEMI P12 |
DETERMINATION OF IRON, ZINC, CALCIUM, MAGNESIUM, COPPER, BORON, ALUMINUM, CHROMIUM, MANGANESE, AND NICKEL IN POSITIVE PHOTORESISTS BY INDUCTIVELY COUPLED PLASMA EMISSION SPECTROSCOPY (ICP) |
|
SEMI P15 |
DETERMINATION OF SODIUM AND POTASSIUM IN POSITIVE PHOTORESIST METAL ION FREE (MIF) DEVELOPERS BY ATOMIC ABSORPTION SPECTROSCOPY |
|
SEMI P13 |
DETERMINATION OF SODIUM AND POTASSIUM IN POSITIVE PHOTORESISTS BY ATOMIC ABSORPTION SPECTROSCOPY |
|
SEMI P16 |
DETERMINATION OF TIN IN POSITIVE PHOTORESIST METAL ION FREE (MIF) DEVELOPERS BY GRAPHITE FURNACE ATOMIC ABSORPTION SPECTROSCOPY |
|
SEMI P14 |
DETERMINATION OF TIN IN POSITIVE PHOTORESISTS BY GRAPHITE FURNACE ATOMIC ABSORPTION SPECTROSCOPY |
|
SEMI ME1392 |
GUIDE FOR ANGLE RESOLVED OPTICAL SCATTER MEASUREMENTS ON SPECULAR OR DIFFUSE SURFACES |
|
SEMI C10 |
GUIDE FOR DETERMINATION OF METHOD DETECTION LIMITS |
|
SEMI M18 |
GUIDE FOR DEVELOPING SPECIFICATION FORMS FOR ORDER ENTRY OF SILICON WAFERS |
|
SEMI E150 |
GUIDE FOR EQUIPMENT TRAINING BEST PRACTICES |
|
SEMI D27 |
GUIDE FOR FLAT PANEL DISPLAY EQUIPMENT COMMUNICATION INTERFACES |
|
SEMI F13 |
GUIDE FOR GAS SOURCE CONTROL EQUIPMENT |
|
SEMI F41 |
GUIDE FOR QUALIFICATION OF A BULK CHEMICAL DISTRIBUTION SYSTEM USED IN SEMICONDUCTOR PROCESSING |
|
SEMI D38 |
GUIDE FOR QUALITY AREA OF LCD MASKS |
|
SEMI E6 |
GUIDE FOR SEMICONDUCTOR EQUIPMENT INSTALLATION DOCUMENTATION |
|
SEMI F49 |
GUIDE FOR SEMICONDUCTOR FACTORY SYSTEMS VOLTAGE SAG IMMUNITY |
|
SEMI S16 |
GUIDE FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT DESIGN FOR REDUCTION OF ENVIRONMENTAL IMPACT AT END OF LIFE |
|
SEMI F14 |
GUIDE FOR THE DESIGN OF GAS SOURCE EQUIPMENT ENCLOSURES |
|
SEMI F98 |
GUIDE FOR TREATMENT OF REUSE WATER IN SEMICONDUCTOR PROCESSING |
|
SEMI E51 |
GUIDE FOR TYPICAL FACILITIES SERVICES AND TERMINATION MATRIX |
|
SEMI E129 |
GUIDE TO ASSESS AND CONTROL ELECTROSTATIC CHARGE IN A SEMICONDUCTOR MANUFACTURING FACILITY |
|
SEMI E78 |
GUIDE TO ASSESS AND CONTROL ELECTROSTATIC DISCHARGE (ESD) AND ELECTROSTATIC ATTRACTION (ESA) FOR EQUIPMENT |
|
SEMI C38 |
GUIDELINE FOR PHOSPHORUS OXYCHLORIDE |
|
SEMI P22 |
GUIDELINE FOR PHOTOMASK DEFECT CLASSIFICATION AND SIZE DEFINITION |
|
SEMI C62 |
GUIDELINE FOR POROGEN PRECURSORS USED IN LOW K CVD PROCESSES |
|
SEMI C47 |
GUIDELINE FOR TRANS 1,2 DICHLOROETHYLENE |
|
SEMI G32 |
GUIDELINE FOR UNENCAPSULATED THERMAL TEST CHIP |
|
SEMI S12 |
GUIDELINES FOR EQUIPMENT DECONTAMINATION |
|
SEMI E112 |
MECHANICAL SPECIFICATION FOR A 150 mm MULTIPLE RETICLE SMIF POD (MRSP150) USED TO TRANSPORT AND STORE MULTIPLE 6 INCH RETICLES |
|
SEMI E103 |
MECHANICAL SPECIFICATION FOR A 300 mm SINGLE-WAFER BOX SYSTEM THAT EMULATES A FOUP |
|
SEMI D17 |
MECHANICAL SPECIFICATION FOR CASSETTES USED TO SHIP FLAT PANEL DISPLAY GLASS SUBSTRATES |
|
SEMI P8 |
METHOD FOR THE DETERMINATION OF WATER IN PHOTORESIST |
|
SEMI E39 |
OBJECT SERVICES STANDARD: CONCEPTS, BEHAVIOR, AND SERVICES |
|
SEMI C6.6 |
PARTICLE SPECIFICATION FOR GRADE 10/0.1 NITROGEN (N2) AND ARGON (Ar) DELIVERED AS PIPELINE GAS |
|
SEMI P30 |
PRACTICE FOR CATALOG PUBLICATION OF CRITICAL DIMENSION MEASUREMENT SCANNING ELECTRON MICROSCOPES (CD-SEM) |
|
SEMI M56 |
PRACTICE FOR DETERMINING COST COMPONENTS FOR METROLOGY EQUIPMENT DUE TO MEASUREMENT VARIABILITY AND BIAS |
|
SEMI M69 |
PRACTICE FOR DETERMINING WAFER NEAR-EDGE GEOMETRY USING ROLL-OFF AMOUNT, ROA |
|
SEMI MF1708 |
PRACTICE FOR EVALUATION OF GRANULAR POLYSILICON BY MELTER-ZONER SPECTROSCOPIES |
|
SEMI MF728 |
PRACTICE FOR PREPARING AN OPTICAL MICROSCOPE FOR DIMENSIONAL MEASUREMENTS |
|
SEMI T6 |
PROCEDURE AND FORMAT FOR REPORTING OF TEST RESULTS BY ELECTRONIC DATA INTERCHANGE (EDI) |
|
SEMI E97 |
PROVISIONAL SPECIFICATION FOR CIM FRAMEWORK GLOBAL DECLARATIONS AND ABSTRACT INTERFACES |
|
SEMI D26 |
PROVISIONAL SPECIFICATION FOR LARGE AREA MASKS FOR FLAT PANEL DISPLAYS (NORTH AMERICA) |
|
SEMI F57 |
PROVISIONAL SPECIFICATION FOR POLYMER COMPONENTS USED IN ULTRAPURE WATER AND LIQUID CHEMICAL DISTRIBUTION SYSTEMS |
|
SEMI E144 |
PROVISIONAL SPECIFICATION FOR RF AIR INTERFACE BETWEEN RFID TAGS IN CARRIERS AND RFID READERS IN SEMICONDUCTOR PRODUCTION AND MATERIAL HANDLING EQUIPMENT |
|
SEMI E128 |
PROVISIONAL SPECIFICATION FOR XML MESSAGE STRUCTURES |
|
SEMI E42 |
RECIPE MANAGEMENT STANDARD: CONCEPTS, BEHAVIOR, AND MESSAGE SERVICES |
|
SEMI G45 |
RECOMMENDED PRACTICE FOR FLASH CHARACTERISTICS OF THERMOSETTING MOLDING COMPOUNDS |
|
SEMI S19 |
SAFETY GUIDELINE FOR TRAINING OF SEMICONDUCTOR MANUFACTURING EQUIPMENT INSTALLATION, MAINTENANCE AND SERVICE PERSONNEL |
|
SEMI S7 |
SAFETY GUIDELINES FOR ENVIRONMENTAL, SAFETY, AND HEALTH (ESH) EVALUATION OF SEMICONDUCTOR MANUFACTURING EQUIPMENT |
|
SEMI E54 |
SENSOR/ACTUATOR NETWORK STANDARD |
|
SEMI T4 |
SPECIFICATION FOR 150 mm AND 200 mm POD IDENTIFICATION DIMENSIONS |
|
SEMI F20 |
SPECIFICATION FOR 316L STAINLESS STEEL BAR, FORGINGS, EXTRUDED SHAPES, PLATE, AND TUBING FOR COMPONENTS USED IN GENERAL PURPOSE, HIGH PURITY AND ULTRA-HIGH PURITY SEMICONDUCTOR MANUFACTURING APPLICATIONS |
|
SEMI T5 |
SPECIFICATION FOR ALPHANUMERIC MARKING OF ROUND COMPOUND SEMICONDUCTOR WAFERS |
|
SEMI M13 |
SPECIFICATION FOR ALPHANUMERIC MARKING OF SILICON WAFERS |
|
SEMI C3.12 |
SPECIFICATION FOR AMMONIA (NH3) IN CYLINDERS, 99.998% QUALITY |
|
SEMI T1 |
SPECIFICATION FOR BACK SURFACE BAR CODE MARKING OF SILICON WAFERS |
|
SEMI G72 |
SPECIFICATION FOR BALL GRID ARRAY DESIGN LIBRARY |
|
SEMI G83 |
SPECIFICATION FOR BAR CODE MARKING OF PRODUCT PACKAGES |
|
SEMI C61 |
SPECIFICATION FOR BAR-CODE CONTAINER IDENTIFICATION |
|
SEMI G22 |
SPECIFICATION FOR CERAMIC PIN GRID ARRAY PACKAGES |
|
SEMI G1 |
SPECIFICATION FOR CERDIP PACKAGE CONSTRUCTIONS |
|
SEMI G34 |
SPECIFICATION FOR CER-PACK PACKAGE CONSTRUCTIONS, INCLUDING LEADFRAMES, SUITABLE FOR AUTOMATED ASSEMBLY BY END USERS |
|
SEMI P2 |
SPECIFICATION FOR CHROME THIN FILMS FOR HARD SURFACE PHOTOMASKS |
|
SEMI G50 |
SPECIFICATION FOR CO-FIRED CERAMIC FINE PITCH LEADED AND LEADLESS CHIP CARRIER PACKAGE CONSTRUCTIONS |
|
SEMI E134 |
SPECIFICATION FOR DATA COLLECTION MANAGEMENT |
|
SEMI E10 |
SPECIFICATION FOR DEFINITION AND MEASUREMENT OF EQUIPMENT RELIABILITY, AVAILABILITY, AND MAINTAINABILITY (RAM) |
|
SEMI T13 |
SPECIFICATION FOR DEVICE TRACKING: CONCEPTS, BEHAVIOR AND SERVICES |
|
SEMI F87 |
SPECIFICATION FOR DIMENSION OF THREE PORT COMPONENTS (EXCEPT MFC/MFM) FOR 1.125 INCH TYPE FOUR FASTENER CONFIGURATION SURFACE MOUNT GAS DISTRIBUTION SYSTEMS |
|
SEMI F84 |
SPECIFICATION FOR DIMENSION OF THREE PORT COMPONENTS (EXCEPT MFC/MFM) FOR 1.125 INCH TYPE TWO FASTENER CONFIGURATION SURFACE MOUNT GAS DISTRIBUTION SYSTEMS |
|
SEMI F86 |
SPECIFICATION FOR DIMENSION OF TWO PORT COMPONENTS (EXCEPT MFC/MFM) FOR 1.125 INCH TYPE FOUR FASTENER CONFIGURATION SURFACE MOUNT GAS DISTRIBUTION SYSTEMS |
|
SEMI F83 |
SPECIFICATION FOR DIMENSION OF TWO PORT COMPONENTS (EXCEPT MFC/MFM) FOR 1.125 INCH TYPE TWO FASTENER CONFIGURATION SURFACE MOUNT GAS DISTRIBUTION SYSTEMS |
|
SEMI C3.34 |
SPECIFICATION FOR DISILANE (Si2H6) IN CYLINDERS, 97% QUALITY |
|
SEMI E132 |
SPECIFICATION FOR EQUIPMENT CLIENT AUTHENTICATION AND AUTHORIZATION |
|
SEMI D11 |
SPECIFICATION FOR FLAT PANEL DISPLAY GLASS SUBSTRATE CASSETTES |
|
SEMI G64 |
SPECIFICATION FOR FULL-PLATED INTEGRATED CIRCUIT LEADFRAMES (Au, Ag, Cu, Ni, Pd/Ni, Pd) |
|
SEMI P1 |
SPECIFICATION FOR HARD SURFACE PHOTOMASK SUBSTRATES |
|
SEMI C3.37 |
SPECIFICATION FOR HEXAFLUOROETHANE (C2F6), 99.97% QUALITY |
|
SEMI D32 |
SPECIFICATION FOR IMPROVED INFORMATION MANAGEMENT FOR GLASS FPD SUBSTRATES THROUGH ORIENTATION CORNER UNIFICATION |
|
SEMI G4 |
SPECIFICATION FOR INTEGRATED CIRCUIT LEADFRAME MATERIALS USED IN THE PRODUCTION OF STAMPED LEADFRAMES |
|
SEMI G28 |
SPECIFICATION FOR LEADFRAMES FOR PLASTIC MOLDED S.O. PACKAGES |
|
SEMI T8 |
SPECIFICATION FOR MARKING OF GLASS FLAT PANEL DISPLAY SUBSTRATES WITH A TWO-DIMENSIONAL MATRIX CODE SYMBOL |
|
SEMI C32 |
SPECIFICATION FOR METHYL ETHYL KETONE |
|
SEMI C3.58 |
SPECIFICATION FOR OCTAFLUOROCYCLOBUTANE, C4F8, ELECTRONIC GRADE IN CYLINDERS |
|
SEMI G79 |
SPECIFICATION FOR OVERALL DIGITAL TIMING ACCURACY |
|
SEMI P18 |
SPECIFICATION FOR OVERLAY CAPABILITIES OF WAFER STEPPERS |
|
SEMI C3.6 |
SPECIFICATION FOR PHOSPHINE (PH3) IN CYLINDERS, 99.98% QUALITY |
|
SEMI C37 |
SPECIFICATION FOR PHOSPHORIC ETCHANTS |
|
SEMI M23 |
SPECIFICATION FOR POLISHED MONOCRYSTALLINE INDIUM PHOSPHIDE WAFERS |
|
SEMI M24 |
SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON PREMIUM WAFERS |
|
SEMI M8 |
SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON TEST WAFERS |
|
SEMI F96 |
SPECIFICATION FOR PORT CONFIGURATION OF CANISTERS TO CONTAIN LIQUID CVD PRECURSORS |
|
SEMI G33 |
SPECIFICATION FOR PRESSED CERAMIC PIN GRID ARRAY PACKAGES |
|
SEMI E130 |
SPECIFICATION FOR PROBER SPECIFIC EQUIPMENT MODEL FOR 300 mm ENVIRONMENT (PSEM300) |
|
SEMI E139 |
SPECIFICATION FOR RECIPE AND PARAMETER MANAGEMENT (RaP) |
|
SEMI E33 |
SPECIFICATION FOR SEMICONDUCTOR MANUFACTURING FACILITY ELECTROMAGNETIC COMPATIBILITY |
|
SEMI M47 |
SPECIFICATION FOR SILICON-ON-INSULATOR (SOI) WAFERS FOR CMOS LSI APPLICATIONS |
|
SEMI G3 |
SPECIFICATION FOR SlDEBRAZED LAMINATES |