SEMI M64 TEST METHOD FOR THE EL2 DEEP DONOR CONCENTRATION IN SEMI-INSULATING (SI) GALLIUM ARSENIDE SINGLE CRYSTALS BY INFRARED ABSORPTION SPECTROSCOPY

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SEMI M64 Document Information:

Title
TEST METHOD FOR THE EL2 DEEP DONOR CONCENTRATION IN SEMI-INSULATING (SI) GALLIUM ARSENIDE SINGLE CRYSTALS BY INFRARED ABSORPTION SPECTROSCOPY

Semiconductor Equipment and Materials International

Publication Date:
Mar 1, 2006

Scope:

This test method covers a procedure for measuring the concentration of the deep donor EL2 in SI GaAs. This method focuses on improving the accuracy and repeatability of the measurement by standardizing the test conditions and reporting and by routine calibration of the measurement.

This test method is intended to cover SI GaAs samples with an electrical resistivity in the range from 1 × 10⁶ to 5 × 10⁸ Ocm, determined by doping with carbon. The concentration of EL2 must be greater than 5 × 10¹⁵ cm^-3.

NOTICE: This standard does not purport to address safety issues, if any, associated with its use. It is the responsibility of the users of this standard to establish appropriate safety and health practices and determine the applicability of regulatory or other limitations prior to use.

Purpose

The purpose of this document is to specify a method to measure the concentration of the deep donor EL2 in SI GaAs by infrared absorption.

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