IHS Inc., Home - http://www.ihs.com

SEMI MS2 TEST METHOD FOR STEP HEIGHT MEASUREMENTS OF THIN FILMS


Purchase Information
Use this form to request purchase information on SEMI online subscriptions.
SEMI Collections
First Name:

Last Name:

Email address:

Document SEMI MS2 is offered by IHS as part of an online subscription. This subscription contains many documents on the same topic.

You may also purchase this document alone from the IHS Standards Store.


SEMI MS2 Document Information:

Title
TEST METHOD FOR STEP HEIGHT MEASUREMENTS OF THIN FILMS

Semiconductor Equipment and Materials International

Publication Date:
Nov 1, 2009

Scope:

This test method presents a procedure for measuring step heights of thin films using step height test structures. It applies only to films, such as those found in microelectromechanical system (MEMS) materials, which can be accurately imaged using an optical interferometer or comparable instrument with the capability of obtaining topographical 2-D data traces.

NOTICE: This standard does not purport to address safety issues, if any, associated with its use. It is the responsibility of the users of this standard to establish appropriate safety and health practices and determine the applicability of regulatory or other limitations prior to use.

Purpose 

This test method enables the determination of step height measurements of thin films. Step height measurements can be used to determine thin film thickness values. Thickness measurements1 are an aid in the design and fabrication of MEMS devices and can be used to obtain thin film material parameters, such as Young's modulus.2

1 Marshall, J. C., and Vernier, P. T., "Electro-Physical Technique for Post-Fabrication Measurements of CMOS Process Layer Thicknesses," NIST J. Res., Vol. 112, No. 5 (2007): pp. 223–256.

Gupta, R. K., Osterberg, P. M., and Senturia, S. D., "Material Property Measurements of Micromechanical Polysilicon Beams," Microlithography and Metrology in Micromachining II, SPIE, Vol 2880 (October 14-15, 1996): pp. 39–45.

Jensen, B. D., de Boer, M. P., Masters, N. D., Bitsie, F., and LaVan, D. A., "Interferometry of Actuated Microcantilevers to Determine Material Properties and Test Structure Nonidealities in MEMS," Journal of Microelectromechanical Systems, Vol 10 (September 2001): pp. 336–346.

Marshall, J. C., "New Optomechanical Technique for Measuring Layer Thickness in MEMS Processes," Journal of Microelectromechanical Systems, Vol 10 (March 2001): pp. 153–157.

2 Marshall, J. C., Herman, D. L., Vernier, P. T., DeVoe, D. L. and Gaitan, M., "Young's Modulus Measurements in Standard IC CMOS Processes using MEMS Test Structures," IEEE Electron Device Letters, Vol. 28, No. 11 (2007): pp. 960–963.

About IHS
IHS (NYSE: IHS) is a leading global provider of critical technical information, decision-support tools and related services in a number of industries including aerospace and defense, automotive, construction, electronics, and energy. IHS serves customers ranging from large governments and multinational corporations to smaller companies and technical professionals in more than 100 countries. IHS been in business for more than 45 years and employ more than 2,300 people around the world.

 

Legal Statement | Site Map | Privacy Policy | Standards Store

Redirector