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SEMI MF1366 Document Information:
Title
TEST METHOD FOR MEASURING OXYGEN CONCENTRATION IN HEAVILY DOPED SILICON SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY
Semiconductor Equipment and Materials International
Publication Date:
Mar 1, 2008
Scope:
This test method covers the determination of total oxygen
concentration in the bulk of single crystal silicon substrates
using secondary ion mass spectrometry (SIMS).
This test method can be used for silicon in which the dopant
concentrations are less than 0.2% (1 x 1020
atoms/cm3) for boron, antimony, arsenic, and phosphorus
(see SEMI MF723). This test method is especially applicable for
silicon that has resistivity between 0.0012 and 1 Ohms·cm for
p-type silicon and between 0.008 and 0.2 Ohms·cm for
n-type silicon (see SEMI MF43).
This test method can be used for silicon in which the oxygen
content is greater than the SIMS instrumental oxygen background as
measured in a float zone silicon sample, but the test method has a
useful precision especially when the oxygen content is much greater
(approximately 10 to 20x) than the measured oxygen background in
the float zone silicon.
This test method is complementary to infrared absorption
spectroscopy that can be used for the measurement of interstitial
oxygen in silicon that has resistivity greater than 1 O·cm for
p-type silicon and greater than 0.1 Ohms·cm for
n-type silicon (see SEMI MF1188). The infrared absorption
measurement can be extended to between 0.02 and 0.1Ohms·cm for
n-type silicon with minor changes in the measurement
procedure.1
In principle, different sample surfaces can be used, but the
precision estimate was taken from data on chemical-mechanical
polished surfaces.
NOTICE: This standard does not purport to
address safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine the
applicability of regulatory or other limitations prior to use.
Purpose
The presence of oxygen can be beneficial to certain
manufacturing operations by preventing the formation of
process-induced defects. Oxygen is introduced into silicon wafers
during the crystal growing process. Hence, it is very important to
control the oxygen content of silicon crystals.
SIMS can measure the oxygen concentration in heavily-doped
silicon substrates used for epitaxial silicon where the free
carrier concentration obscures the infrared absorption and prevents
the normal use of the infrared measurement as a characterization
technique for the commercial production of silicon.
The SIMS measurement allows for the production of controlled
oxygen content in heavily-doped silicon crystals.
This test method can be used for process control, research and
development, and materials acceptance purposes.
1 Hill, D. E., "Determination of Interstitial Oxygen
Concentration in Low-Resistivity n-type Silicon Wafers by
Infrared Absorption Measurements," J. Electrochem. Soc.
137, 3926 (1990).
Keywords:
- FTIR
- oxygen
- secondary ion mass spectrometry
- silicon
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