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SEMI MF950 Document Information:
Title
TEST METHOD FOR MEASURING THE DEPTH OF CRYSTAL DAMAGE OF A MECHANICALLY WORKED SILICON WAFER SURFACE BY ANGLE POLISHING AND DEFECT ETCHING
Semiconductor Equipment and Materials International
Publication Date:
Nov 1, 2007
Scope:
This test method covers a technique to measure the depth of
damage, on or beneath the surface of silicon wafers prior to any
heat treatment of the wafer. Such damage results from mechanical
surface treatments such as sawing, lapping, grinding, sandblasting,
and shot peening.
The damage is revealed by a preferential etch that removes
silicon in the region of the deformation. Preferential etching
occurs because the chemical potential in the region of the
deformation is changed by the stress fields associated with the
deformation. The depth of damage is expressed in micrometers.
The measurement is destructive because a specimen is prepared
from a section of a silicon wafer.
Depth of damage can be measured in the range of 5–200 µm using
this method.
NOTICE: This standard does not purport to
address safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine the
applicability of regulatory or other limitations prior to use.
Purpose
The principal application of this test method is for determining
the depth of damage of the non-polished back surface of a silicon
wafer that has had intentionally added work damage. This test
method is intended for use in process control where each individual
location is responsible to determine the internal repeatability to
its satisfaction.
This test method provides a means for measuring the depth of
mechanical damage in silicon wafers in the range from 5–200 µm.
This test method can be used for process control or research and
development purposes. It is not recommended for use in material
acceptance.
Keywords:
- bevel polish
- damage-depth
- defect
- preferential etch
- silicon
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