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SEMI MF95 Document Information:
Title
TEST METHOD FOR THICKNESS OF LIGHTLY DOPED SILICON EPITAXIAL LAYERS ON HEAVILY DOPED SILICON SUBSTRATES USING AN INFRARED DISPERSIVE SPECTROPHOTOMETER
Semiconductor Equipment and Materials International
Publication Date:
Nov 1, 2007
Scope:
This test method is a manual technique that requires the use of
a dispersive infrared spectrophotometer. For this measurement, the
resistivity of the substrate must be less than 0.02O·cm at 23°C and
the resistivity of the layer must be greater than 0.1 O·cm at 23°C.
A brief description of the theory of this test method is given in
Related Information 1.
This technique is capable of measuring the thickness of both n-
and p-type layers greater than 2 µm thick. With reduced precision,
the technique may also be applied to both n- and
p-type layers from 0.5 to 2 µm thick.
Automated test systems, utilizing Fourier-Transform Infrared
Spectrophotometry (FT-IR), are now widely used for epitaxial layer
thickness measurements. Because such instruments are normally
supplied with proprietary software for measurement analysis,
detailed procedures for the use of such instruments are not
included in this test method. However, for information purposes,
estimates of single instrument repeatability and multi-instrument
reproducibility, based on a 1986/1987 multilaboratory comparison of
FT-IR instrument measurements are given in Note 6 and Related
Information 2.
Procedures for preparing the specimen, for measuring its size,
and for determining the temperature of the specimen during the
measurements are also given.
NOTICE: This standard does not purport to address safety issues,
if any, associated with its use. It is the responsibility of the
users of this standard to establish appropriate safety and health
practices and determine the applicability of regulatory or other
limitations prior to use.
Purpose
The thickness of the epitaxial layer is an important process
control and materials acceptance requirement for silicon epitaxial
wafers.
This test method1 provides a technique for the measurement of
the thickness of epitaxial layers of silicon deposited on silicon
substrates.
This test method is suitable for referee measurements.
Keywords:
- epi
- epi thickness
- epitaxial layer
- FT-IR
- index of refraction
- IR
- layer thickness
- spectrophotometer
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