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SEMI MF1389 Document Information:
Title
TEST METHODS FOR PHOTOLUMINESCENCE ANALYSIS OF SINGLE CRYSTAL SILICON FOR III-V IMPURITIES
Semiconductor Equipment and Materials International
Publication Date:
Jul 1, 2004
Scope:
These test methods cover the simultaneous determination of
electrically active boron, phosphorus, arsenic, and aluminum
content in low-dislocation monocrystalline silicon.
NOTE 1: These chemical species can also be determined by the low
temperature infrared analysis procedure of SEMI MF1630.
These test methods can be used for samples that have dopant
densities between approximately 1 x 1011 and
approximately 5 x 1015 atoms/cm3.
The concentrations obtained using these test methods are based
on an empirically determined relationship of the logarithm of the
concentration to the logarithm of specific luminescence
line-intensity ratios.
The empirical relationship established assumes a constant sample
excitation level for all measurements on a given instrument.
To accommodate differences in instrumentation, two methods are
included. Test Method A refers to procedures appropriate for
dispersive infrared spectrophotometers operating under the high
sample excitation conditions and Test Method B refers to procedures
appropriate for Fourier transform instruments operating under low
excitation conditions.
Typical calibration curves for each test method are provided.
These curves are modified for each instrument using the analysis of
standard samples as reference data. Once modified, the curves for a
given instrument should produce sample dopant density values that
agree with other similarly operated instruments using the same test
method. Data obtained using Test Method A may not agree with data
obtained using Test Method B, hence values must be reported with
reference to the test method used.
NOTE 2: Several different methods of photoluminescence analysis
are currently in practice worldwide. These test methods address two
of these, one (Test Method A) in use primarily in Japan1
and the other (Test Method B) primarily in the United States.
Recently published works2,3 describe other
approaches.
Many laboratories use photoluminescence to analyze epitaxial
layers. However this application encounters many variables and the
underlying physics is not fully understood; hence these test
methods do not attempt to outline standard practices regarding such
analysis.
NOTICE: This standard does not purport to
address safety issues, if any, associated with its use. It is the
responsibility of the user of this standard to establish
appropriate safety and health guides and determine the
applicability of regulatory or other limitations prior to use.
1 Test Method A is essentially equivalent to JIS H
0615, Test Method for Determination of Impurity Concentrations in
Silicon Crystal by Photoluminescence Spectroscopy. This standard is
available from Japanese Standard Association 1-24, Akasaka 4 Chome,
Minato-ku, Tokyo 107-0000, Japan. Telephone: 81-(0)3- 3583-8005;
Fax: 81-(0)3-3586-2014; Website:
www.jsa.or.jp.
2 Colley, P. McL., and Lightowlers, E. C.,
"Calibration of the Photoluminescence Technique for Measuring B, P,
and Al Concentrations in Silicon in the Range 1e12 to 1e15 at/cm 3
Using Fourier Transform Spectroscopy," Semiconductor Science
and Technology 2, 157–166 (1987).
3 Schumacher, K. L., and Whitney, R. L., J.
Electron. Materials 18(6), 681–687 (1989).
Keywords:
- aluminum
- arsenic
- boron
- dopant
- impurities
- impurity analysis
- phosphorus
- photoluminescence
- silicon
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