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Document SEMI M67 is offered by IHS as part of an online subscription. This subscription contains many documents on the same topic.
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SEMI M67 Document Information:
Title
PRACTICE FOR DETERMINING WAFER NEAR-EDGE GEOMETRY FROM A MEASURED THICKNESS DATA ARRAY USING THE ESFQR, ESFQD AND ESBIR METRICS
Semiconductor Equipment and Materials International
Publication Date:
Nov 1, 2008
Scope:
This practice covers calculation of the near-edge geometry
metrics ESFQR, ESFQD and ESBIR.1
The metrics calculated by this practice are based on a thickness
data array. This array represents the front surface of the wafer
when the back surface of the wafer is ideally flat, as when pulled
down onto an ideally clean flat chuck.
This practice is suitable for polished, epitaxial, SOI, or other
layer condition.
The practice is applicable to notched 200 and 300 mm diameter
wafers having dimensions in accordance with wafer categories 1.9.2
and 1.15 of SEMI M1.
This practice does not cover acquisition of the thickness data
array. However, it gives the required characteristics of the
thickness data array.
Other metrics analogous to flatness metrics can be calculated,
but these are outside the scope of this practice.
NOTICE: This standard does not purport to
address safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine the
applicability of regulatory or other limitations prior to use.
Purpose
Wafer near-edge geometry can significantly affect the yield of
semiconductor device processing.
Knowledge of near-edge geometrical properties can help the
producer and consumer determine if the dimensional characteristics
of a wafer satisfy given geometrical requirements.
This practice is suitable for quantifying the flatness aspects
of near-edge geometry of wafers used in semiconductor device
processing.
The ESFQR, ESFQD or ESBIR metric may be more suitable for
quantifying the flatness aspects of near-edge geometry than
traditional metrics such as SFQR, SFQD or SBIR. ESFQR, ESFQD and
ESBIR quantify near-edge geometry fully and consistently at all
angular positions on the wafer edge except at locations
intentionally excluded. SFQR, SFQD and SBIR, on the other hand
treat different angular positions differently and do not typically
provide full coverage of the wafer edge.
NOTE 1: Acronyms beginning with E are analogous to those in
Appendix 1 of SEMI M1 but relate to the near-edge region. The
letter "S" in these acronyms refers to an edge Sector rather than
to an exposure Site.
Consideration should be given to the use of near-edge geometry
metrics as a process control tool rather than a material exchange
specification.
There are other metrics for near-edge geometry, some of which
quantify other aspects such as ZDD, ROA and PSFQR.
NOTE 2: ERO is frequently employed as a more general term for
describing near-edge geometry, but as of the approval date of this
standard there are no standardized conditions or test procedures
for it. As such a general term, ERO is included in the keywords for
this standard, even though it is outside the scope of the
standard.
1 The calculation of these metrics is the subject of U.S. Patent
7,324,917 owned by KLA-Tencor Corporation, One Technology Drive,
Milpitas, CA 95035. KLA-Tencor has informed SEMI that, per SEMI
regulations, it will license this patent on reasonable and
customary terms.
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