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Document SEMI M50 is offered by IHS as part of an online subscription. This subscription contains many documents on the same topic.
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SEMI M50 Document Information:
Title
TEST METHODS FOR DETERMINING CAPTURE RATE AND FALSE COUNT RATE FOR SURFACE SCANNING INSPECTION SYSTEMS BY THE OVERLAY METHOD
Semiconductor Equipment and Materials International
Publication Date:
Nov 1, 2009
Scope:
These test methods address calculating and reporting SSIS
capture rate from measurements of either PSL depositions or other
LLSs on wafers in LSE units.
Two test methods are covered:
Static Method — In which the test is conducted under
level 1 variability conditions (without removing the wafer from the
stage of the SSIS between scans).
Dynamic Method — In which the test is conducted under
level 2 variability conditions (with removing the wafer from and
reloading it to the stage of the SSIS between scans).
Specific wafer surfaces (by wafer product, type of film or type
of polish) that may affect the measured capture rate and false
count rate of an SSIS are to be agreed upon between suppliers and
customers.
NOTICE: This standard does not purport to
address safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine the
applicability of regulatory or other limitations prior to use.
Purpose
SEMI M52 defines capture rate (CR) requirements to be met by a
scanning surface inspection system (SSIS) to be used for the 130 nm
through 45 nm technology generations.
These test methods cover determination of the CR, the false
count rate (FCR) and the cumulative false count rate (CFCR) of an
SSIS as a function of latex sphere equivalent (LSE) size of
localized light scatterers (LLSs).
NOTE 1: In the context of this document the term "size" refers
to the LSE diameter of the LLS.
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