SEMI MF26 TEST METHODS FOR DETERMINING THE ORIENTATION OF A SEMICONDUCTIVE SINGLE CRYSTAL

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SEMI MF26 Document Information:

Title
TEST METHODS FOR DETERMINING THE ORIENTATION OF A SEMICONDUCTIVE SINGLE CRYSTAL

Semiconductor Equipment and Materials International

Publication Date:
Mar 1, 2005

Scope:

These test methods cover techniques for determining the crystallographic orientation of a surface which is roughly parallel to a low-index atomic plane in single crystals used primarily for semiconductor devices.

NOTE 1: DIN 50433 contains equivalent methods. It is the responsibility of DIN Committee NMP 221. DIN 50433, Testing of Inorganic Semiconductor Materials: Determining the Orientation of Monocrystals; Part 1 with an X-ray Goniometer, and Part 2 by the Light-figure Method, is available from Beuth Verlag GmbH, Burggrafenstrasse 6, 10787 Berlin, Germany, Website: www.beuth.de.

Two types of test methods are covered as follows:

Test Method A, X-ray Diffraction Orientation — This test method may be used for the orientation of all semiconductive single crystals. The X-ray test method is nondestructive and yields the more precise measurement of orientation; however, use of the equipment requires compliance with stringent safety regulations.

Test Method B, Optical Orientation — This test method is limited in application at the present time to elemental semiconductors. The optical test method requires etching the specimen and is therefore destructive of polished wafer surfaces. This test method is less precise than the X-ray test; however, the apparatus required is less complex.

NOTICE: This standard does not purport to address safety issues, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health guides and determine the applicability of regulatory or other limitations prior to use.

Keywords:

germanium

orientation

preferential etch

semiconductor

silicon

X-ray diffraction

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