SEMI M42 SPECIFICATION FOR COMPOUND SEMICONDUCTOR EPITAXIAL WAFERS
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SEMI M42 Document Information:
Title
SPECIFICATION FOR COMPOUND SEMICONDUCTOR EPITAXIAL WAFERS
Semiconductor Equipment and Materials International
Publication Date:
Oct 1, 2000
Scope:
These specifications cover the requirements for epitaxial layers
of the generic composition
AaBbCc...Nn grown on
monocrystalline wafers of GaAs or InP (other substrates may be
considered where appropriate documents exist to describe the
specification of the substrate). This document may only cover a
portion of the properties considered to be part of the purchase
specification.
This specification does not pur port to address safety issues,
if any, associated with its use. It is the responsibility of the
users of this specification to establish appropriate safety and
health practices and determine the applicability of regulatory
limitations prior to use.
Purpose
Compound semiconductor epi taxial layers have been extensively
used for many years as the basis of high speed electronics and
optoelectronic devices. There are suppliers of epitaxial layers who
will grow material to the customer's specification. There is a need
to define standardized descriptive terms, tolerance schedules and
recommended test methods to reduce ambiguity in the interpretation
of specifications for such wafers. Special emphasis is placed on
the definitions pertaining to uniformity. This proposed document
addresses only the basic requirements. Further clarification may be
required between supplier and purchaser for the particular layers
required.
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