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SEMI MF1391 Document Information:
Title
TEST METHOD FOR SUBSTITUTIONAL ATOMIC CARBON CONTENT OF SILICON BY INFRARED ABSORPTION
Semiconductor Equipment and Materials International
Publication Date:
Nov 1, 2007
Scope:
This referee test method1 covers the determination of
substitutional carbon concentration in single crystal silicon.
Because carbon may also reside in interstitial lattice positions
when in concentrations near the solid solubility limit, the results
of this test method may not be a measure of the total carbon
concentration at such concentrations.
The useful range of carbon concentration measurable by this test
method is from the maximum amount of substitutional carbon soluble
in silicon down to about 0.1 parts per million atomic (ppma), that
is, 5 × 1015 cm-3 for measurements at room
temperature, and down to about 0.01 ppma, that is, 0.5 ×
1015 cm-3 at cryogenic temperatures (below 80
K).
This test method utilizes the relationship between carbon
concentration and the absorption coefficient of the infrared
absorption band associated with substitutional carbon in silicon.
At room temperatures (about 300 K), the absorption band peak is at
605 cm-1 or 16.53 µm. At cryogenic temperatures (below
80 K), the absorption band peak is at 607.5 cm-1 or
16.46 µm.
This test method is applicable to slices of silicon with
resistivity higher than 3 O·cm for p-type and higher than
1 O·cm for n-type. Slices can be any crystallographic
orientation and should be polished on both surfaces.
This test method is intended to be used with infrared
spectrophotometers that are equipped to operate in the region from
2000 to 500 cm-1 (5 to 20 µm).
This test method provides procedure and calculation sections for
the cases where thickness values of test and reference specimens
are both closely and not closely matched.
NOTICE: This standard does not purport to
address safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine the
applicability of regulatory or other limitations prior to use.
1 This test method was developed in cooperation with the Silicon
Technologies Committee of the Japan Electronics and Information
Technology Industries Association (JEITA). It is essentially
equivalent to JEITA EM-9503, Standard Test Method for
Substitutional Atomic Carbon Content of Silicon by Infrared
Absorption, which is available from JEITA, 3rd floor, Mitsui
Sumitomo Kaijo Bldg. Annex, 11, Kanda-Surugadai 3-chome,
Chiyoda-ku, Tokyo 101-0062, Japan;
http://www.jeita.or.jp. DIN
50438/2, Testing of Inorganic Semiconductor Materials:
Determination of the Impurity Content in Silicon by Means of
Infrared Absorption; Carbon, is also a method for measuring the
substitutional carbon content of silicon. It differs in some
aspects, including different conversion coefficients, from this
test method. It is available from Beuth Verlag GmbH,
Burggrafenstrasse 4-10, D-1000 Berlin 30, Germany.
Keywords:
- carbon
- infrared absorption
- infrared spectroscopy
- silicon
- single crystal silicon
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