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SEMI MF525 Document Information:
Title
TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS USING A SPREADING RESISTANCE PROBE
Semiconductor Equipment and Materials International
Publication Date:
Mar 1, 2007
Scope:
This test method covers the measurement of the resistivity of a
silicon substrate of known orientation and type, or of a uniform
silicon epitaxial layer of known orientation and type that is
deposited on a substrate of the same or opposite type. Resistivity
of the epitaxial films can be evaluated without the necessity of
thin film correction factors provided that the ratio of layer
thickness to effective probe contact radius is greater than 20.
This test method is comparative in that the resistivity of an
unknown specimen is determined by comparing its measured spreading
resistance with that of calibration standards of known resistivity.
These calibration standards must have the same surface finish,
conductivity type, and orientation as the unknown specimen.
NOTE 1: Although a structure may consist of several
epitaxial layers on a substrate, in which case each layer is
separated from a neighboring layer (or the substrate) by an
interface region, this test method applies to a structure with a
single layer. With suitable modification, it can be extended to the
multiple layer case, but these modifications have not been
evaluated.
This test method is intended for use on silicon substrates
and epitaxial layers. Within-laboratory precision has been
determined through a multi-laboratory experiment on substrates
having resistivities from 0.01–200 ohm.cm.
The principles of this test method can be extended to lower and
higher specimen resistivity values, but the precision of the test
method has not been evaluated for values other than those in the
range given in ¶ 2.3.
This test method is nondestructive in the sense that the
specimen is not totally destroyed in making the measurements, the
specimen need not be cut into a special shape, and no destructive
processing need be done on the specimen. However, the probe can
produce mechanical damage that may be detrimental to a device
fabricated in the probed area.
The volume of semiconductor material sampled is proportional to
the third power of the effective electrical contact radius of the
probe. For an effective electrical contact radius of 2 µm, the
volume sampled by a single probe is approximately 10-11
cm-3.
NOTICE: This standard does not purport to
address safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine the
applicability of regulatory or other limitations prior to use.
Purpose
This test method provides means for directly determining the
resistivity of a substrate or of an epitaxial layer of thickness
greater than 20 times the effective electrical contact radius.
Unlike SEMI MF84, SEMI MF374, and SEMI MF1392, it can provide
lateral spatial resolution of resistivity on the order of a few
micrometers.
This test method is intended primarily for use in process
control, research, and development applications. In the absence of
between laboratory precision data, this test method is not
recommended for use between supplier and customer unless
correlation experiments have been conducted between the
parties.
Keywords:
- calibration
- epitaxial layer
- resistivity
- silicon
- spreading resistance
- spreading resistance probe
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