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SEMI M30 Document Information:
Title
STANDARD TEST METHOD FOR SUBSTITUTIONAL ATOMIC CARBON CONCENTRATION IN GaAs BY FOURIER TRANSFORM INFRARED ABSORPTION SPECTROSCOPY
Semiconductor Equipment and Materials International
Publication Date:
Sep 1, 1997
Scope:
This referee test method cover s the determination of
substitutional carbon concentration in single crystal GaAs.
The useful range of carbon concentration measurable at room
temperature by this test method is from the maximum amount of
substitutional carbon soluble in GaAs to 1 × 1015
cm-3. The detection limit depends on the equipment and
measurement conditions. It is expected that many users of this test
method can reduce the detection limit to 1014
cm-3 level. 77K measurement is effective to reduce the
detection limit. In the case of 77K measurement, the upper limit is
1.3 × 1016 cm-3, as described in the
following article:
T.Arai et al : J. Electronic Industry, Vol. 30, 9 (1988) 38
The test method utilizes the re lationship between carbon
concentration and absorption coefficient at 580 cm-1 for
room temperature measurement (around 582 cm-1 for 77K
measurement), the infrared absorption band is associated with
substitutional carbon in GaAs. These specific absorption bands in
GaAs have been associated with the local vibration mode of
Cas.
The method is applicable to Semi-Insulating (SI) GaAs. Slices
can be any crystallographic orientation and should be polished or
lapped and etched on both surfaces.
This test method is intended to be used with FT-IR spectrometers
that are equipped to operate in the region including the wave
number range from 700 to 500 cm-1.
This standard may involve haz ardous materials, operation, and
equipment. This standard does not purport to address all of the
safety problems associated with its use. It is the responsibility
of the user of this standard to establish appropriate safety and
health practices and determine the applicability of regulatory
limitations prior to use.
Purpose
The purpose of this document is to test substitutional atomic
carbon concentration in GaAs by Fourier Transform Infrared
Absorption Spectroscopy (FT-IR).
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