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SEMI MF42 Document Information:
Title
TEST METHODS FOR CONDUCTIVITY TYPE OF EXTRINSIC SEMICONDUCTING MATERIALS
Semiconductor Equipment and Materials International
Publication Date:
Nov 1, 2005
Scope:
These test methods1 cover the determination of the
conductivity type of extrinsic semiconductors. While explicit
details are given for germanium and silicon, inclusion of other
extrinsic materials such as gallium arsenide and indium antimonide
should be feasible. For the latter compounds, however,
applicability has not been formally verified by round-robin tests.
Determinations can be made most reliably on homogeneous bulk
material, but these test methods may also be used to map regions of
different conductivity type on the surfaces of inhomogeneous
specimens. These test methods have not been tested on layered
structures, such as epitaxial layers. Measurements on these
structures may give erroneous indications of conductivity type.
Four test methods are described:
Test Method A—Hot-Probe Thermal EMF Conductivity-Type
Test.
Test Method B—Cold-Probe Thermal EMF Conductivity-Type
Test.
Test Method C—Point-Contact Rectification
Conductivity-Type Test.
Test Method D—Type-All2 system operating in either of
two modes:
Rectification Conductivity-Type Mode.
Thermal EMF Conductivity-Type Mode.
Experience has shown that Test Method A (hot-probe) gives
dependable results in n- and p-type silicon
having room-temperature resistivity up to 1000 O·cm.
NOTE 1: Resistivity of germanium specimens may be measured in
accordance with SEMI MF43 and resistivity of silicon specimens may
be measured in accordance with SEMI MF43 or SEMI MF84.
Test Method B (cold-probe) gives dependable results for
n- and p-type germanium having a room-temperature
resistivity of 20 O·cm or less and for n- and p-type silicon having
a resistivity up to 1000 O·cm (Note 1). This technique has the
advantage over the hot-probe test method in that the signal
amplitude can be increased by developing a greater temperature
difference between the two probes.
Test Method C (rectification) is a simple convenient technique
that gives dependable results for n- and p-type
silicon with room-temperature resistivity between 1 and 1000 O·cm.
This test method is not recommended for germanium.
Test Method D (type-all rectification mode) is appropriate for
use on n- and p-type silicon having
roomtemperature resistivity between 0.1 and 1000 O·cm,
inclusive.
Test Method D (type-all thermal emf mode) is appropriate for use
on n- and p-type silicon having a roomtemperature
resistivity between 0.002 and 0.1 O·cm, inclusive (Note 1).
These test methods may apply outside the limits given above, but
their suitability outside these limits has not been verified
experimentally.
It is recommended that if satisfactory results cannot be
obtained with the use of these test methods that conductivity type
be determined from Hall-effect measurements as described in ASTM
Test Methods F 76.
NOTICE: This standard does not purport to
address safety issues, if any, associated with its use. It is the
responsibility of the user of this standard to establish
appropriate safety and health guides and determine the
applicability of regulatory or other limitations prior to use.
1 DIN 50432, Testing of Inorganic Semiconductor
Materials: Determining the Conductivity Type of Silicon or
Germanium by Means of the Rectification Test or Hot Probe, includes
methods equivalent to Test Methods A and C. It does not include
Test Methods B and D.. DIN 50432, the responsibility of DIN
Committee NMP 221, is available in both German and English editions
from Beuth Verlag GmbH, Burggrafenstrasse 6, 10787 Berlin, Germany,
Telephone: 49.30.2601-0, Fax: 49.30.2601.1263, Website:
www.beuth.de.
Keywords:
- conductivity type
- germanium
- rectification test
- semiconductor
- silicon
- thermal EMF test
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