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SEMI M44 Document Information:
Title
GUIDE TO CONVERSION FACTORS FOR INTERSTITIAL OXYGEN IN SILICON
Semiconductor Equipment and Materials International
Publication Date:
Mar 1, 2005
Scope:
This guide allows the user of the guide to convert quantitative
values obtained from one standard to another.
Two tables are included in the guide.
Table 1 gives the calibration factors to relate peak absorption
coefficient (cm–1) to interstitial oxygen content in
both parts per million atomic (ppma) and atoms/cm3 for
various standards, all of which have been replaced by newer
revisions.
These calibration factors are at times referred to by common
names as indicated in column 1 of the tables and at other times by
the designation of the (obsolete) standard in which they were
standardized (as indicated in the footnotes to Table 1). Despite
the fact that there is a test method associated with each
calibration factor, the detailed procedures in these test methods
are usually ignored in common practice and measurements are most
frequently made with automated (black-box) instruments that have
internal algorithms. Thus, reference to a particular standard most
often indicates only the value of the calibration factor to be
used.
Table 2 gives the conversion factors to convert oxygen
concentration of one standard to oxygen concentration of another
standard.
NOTICE: This standard does not purport to
address safety issues, if any, associated with its use. It is the
responsibility of the user of this standard to establish
appropriate safety and health guides and determine the
applicability of regulatory or other limitations prior to use.
Purpose
Over the years numerous calibration factors used to calculate
the interstitial oxygen content of silicon from the peak
room-temperature infrared absorption at 1107 cm-1 have
been standardized by several standards development organizations in
various parts of the world. All such standards have since been
revised to use the IOC-88 calibration factor1,2 that
more correctly relates the true oxygen content of silicon to the
absorption peak. Nevertheless, many of the old calibration factors
remain in common use throughout the industry.
This guide is a compilation of the conversion and calibration
factors used in standards established by various organizations
since 1970 for the measurement of interstitial oxygen in
silicon.
1 Baghdadi, A., Bullis, W. M., Croarkin, M. C., Li Yue-zhen,
Scace, R. I., Series, R. W., Stallhofer, P., and Watanabe, M.,
"Interlaboratory Determination of the Calibration Factor for the
Measurement of the Interstitial Oxygen Content of Silicon by
Infrared Absorption," J. Electrochem. Soc. 136, 2015–2034
(1989).
2 Baghdadi, A., Scace, R. I., and Walters, E. J.,
"Semiconductor Measurement Technology: Database for and
Statistical Analysis of the Interlaboratory Determination of the
Calibration Factor for the Measurement of the Interstitial Oxygen
Content of Silicon by Infrared Absorption," NIST Special
Publication 400-82, July 1989.
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