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SEMI MF1153 Document Information:
Title
TEST METHOD FOR CHARACTERIZATION OF METAL-OXIDE-SILICON (MOS) STRUCTURES BY CAPACITANCE-VOLTAGE MEASUREMENTS
Semiconductor Equipment and Materials International
Publication Date:
Nov 1, 2006
Scope:
This test method is applicable to n-type and
p-type bulk silicon with carrier density from 5 ×
1014 to 5 × 1016 carriers per cm3,
inclusive, and n/n+ and
p/p+ epitaxial silicon with the same range of
carrier density.
This test method is applicable for test specimens with oxide
thicknesses of 50–300 nm.
This test method can give an indication of the density of
defects within the MOS structure. These defects include interface
trapped charge, fixed oxide charge, trapped oxide charge, and
permanent inversion layers.
This test method is applicable for measurement of mobile ionic
charge density of 1 × 1010 cm-2 or greater. Alternative
techniques, such as the triangular voltage sweep
method,2 may be required where mobile ionic charge
density less than 1 × 1010 cm-2 must be measured.
This test method is applicable for measurement of total fixed
charge density of 5 × 1010 cm-2 or greater. Alternative
techniques, such as the conductance method,3 may be
required where the interface trapped-charge density component of
total fixed charge of less than 5 × 1010 cm-2 must be
measured.
NOTICE: This standard does not purport to address safety issues,
if any, associated with its use. It is the responsibility of the
users of this standard to establish appropriate safety and health
practices and determine the applicability of regulatory or other
limitations prior to use.
Purpose
Net carrier density present near the silicon-oxide interface may
constitute an important acceptance requirement. Where there is not
significant compensation by impurities of the opposite conductivity
type, the material resistivity may be determined from this carrier
density using SEMI MF723.
Flatband voltage is an important parameter in the manufacture of
MOS devices. Its value is dependent on the work function difference
between the silicon and the metal field plate, interface trapped
charge, and fixed or trapped charge distributed within the oxide.
It can be an indicator of anomalies in these
values.1
Instability of the flatband voltage of an MOS structure
subjected to voltage stress at elevated temperatures is a measure
of the mobile ionic charge density within the oxide. Most device
applications require that mobile ionic charge be minimized.
The presence of unwanted subsurface p-n junctions may have
deleterious effects on device operation.
This test method may be employed for qualification of furnaces
or other semiconductor device-processing equipment where such
qualification depends on the determination of contamination
resulting from high mobile ionic charge density.
This test method covers measurement of metal-oxide-silicon (MOS)
structures for flatband capacitance, flatband voltage, average
carrier density within a depletion length of the
semiconductor-oxide interface, displacement of flatband voltage
after application of voltage stress at elevated temperatures,
mobile ionic charge contamination, and total fixed charge density.
Also covered is a procedure for detecting the presence of p-n
junctions in the subsurface region of bulk or epitaxial
silicon.
1 Sze, S. M., Physics of Semiconductor Devices,
(Wiley-Interscience, New York, 1981) pp. 379–402.
2 Kuhn, M., and Silversmith, D. J., "Ionic Contamination and
Transport of Mobile Ions in MOS Structures," J. Electrochem. Soc.
118, 996 (1971).
3 Nicollian, E. H., and Goetzberger, A., "The SiO2
Interface—Electrical Properties as Determined by the MIS
Conductance Technique," Bell Syst. Tech. J. 46, 1105 (1967).
Keywords:
- capacitance-voltage
- carrier density
- fixed charge density
- flatband capacitance
- flatband voltage
- metal-oxide-silicon structures
- mobile ionic charge
- MOS structures
- silicon
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