SEMI M4 SPECIFICATIONS FOR SOS EPITAXIAL WAFERS

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SEMI M4 Document Information:

Title
SPECIFICATIONS FOR SOS EPITAXIAL WAFERS

Semiconductor Equipment and Materials International

Publication Date:
Nov 1, 2003

Scope:

The primary standardized properties set forth in this specification relate to physical, dimensional, and electrical characteristics of SOS epitaxial wafers.

NOTICE: This standard does not purport to address safety issues, if any, associated with its use. It is the responsibility of the users of this standard to establish appropriate safety and health practices and determine the applicability of regulatory or other limitations prior to use.

Purpose

These specifications cover requirements for monocrystalline silicon epitaxial layers on sapphire substrates, used for semiconductor device manufacture. The combination of a silicon epitaxial layer on a sapphire substrate is known as a silicon on sapphire (SOS) epitaxial wafer. By outlining an inspection process and defining various reject criteria, both suppliers and purchasers can uniformly define epitaxial layer quality.

The defects discussed originate from two sources: those which are caused by imperfection in the sapphire substrate and those related to the epitaxial layer, including handling and packaging.

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