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SEMI MF43 Document Information:
Title
TEST METHODS FOR RESISTIVITY OF SEMICONDUCTOR MATERIALS
Semiconductor Equipment and Materials International
Publication Date:
Jul 1, 2005
Scope:
The two test methods in this standard are as follows:
Method A, Two-Probe — This test method requires a bar
specimen of measurable cross section and with cross-sectional
dimensions small in comparison with the length of the bar. For
materials for which no specific referee method has been developed,
this test method is recommended for materials acceptance
purposes.
Method B, Four-Probe — This test method is rapid and
does not require a specimen of regular cross section. This test
method may be used on irregularly shaped specimens, provided a flat
region is available for the contacting probes. As described in this
standard, this test method is applicable only to specimens such
that the thickness of the specimen and the distance from any probe
point to the nearest edge are both at least four times the probe
spacing. For the special case of specimens of circular cross
section with thickness more than one, but less than four, times the
probe spacing, measurements by this test method are possible; the
required application of approximate geometric corrections results
in improved accuracy (see ¶10.1.3).
In general, resistivity measurements are most reliable when made
on single crystals, since with such material local variations in
impurity which affect the resistivity are less severe. Localized
impurity segregation at grain boundaries in polycrystalline
material may result in large resistivity variations. Such effects
are common to either of the measurement test methods but are more
severe with the four-probe test method, and its use, therefore, is
not recommended for polycrystalline material.
The values stated in SI units are to be regarded as the
standard. The values given in parentheses are for information
only.
NOTE 1: DIN 50430 is an equivalent method to Method A and DIN
50431 is an equivalent method to Method B.
NOTE 2: Other standardized test methods are preferred for use in
various special circumstances. For measurements on thin wafers, use
SEMI MF84; this method is preferred for referee measurements on
silicon wafers. For measurements on specimens for which point
contacts are unsatisfactory, use a procedure in ASTM Test Methods F
76 based either on Van Der Pauw or bridge specimens. For two-probe
referee measurements on cylindrical single crystal bars, use SEMI
MF397. For four-probe referee measurements of sheet resistance on
epitaxial layers deposited on or diffused or implanted into
opposite conductivity-type substrates, use SEMI MF374.
NOTICE: This standard does not purport to address safety issues,
if any, associated with its use. It is the responsibility of the
user of this standard to establish appropriate safety and health
guides and determine the applicability of regulatory or other
limitations prior to use.
Keywords:
- germanium
- resistivity
- semiconductor
- silicon
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