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SEMI M54 Document Information:
Title
GUIDE FOR SEMI-INSULATING (SI) GaAs MATERIAL PARAMETERS
Semiconductor Equipment and Materials International
Publication Date:
Mar 1, 2004
Scope:
This document defines and describes the electrical, optical,
structural, and surface properties of SI GaAs that are considered
technically relevant according to the present status of scientific
knowledge and material technology.
A specification of the material quality of SI GaAs substrates
includes a number of the parameters described below. Depending on
the intended application, a particular subset of properties and
respective parameters will be considered relevant by the
purchaser.
In order to enhance the clarity and applicability of the
document, the ordering information in Section 6 subdivides the
material parameters in respect of their relative importance,
according to general industry perception.
Some material properties and parameters, while intensively
discussed in the technical literature, are insufficiently
established to allow an unambiguous specification. The available
information is nevertheless included to support supplier-purchaser
discussions and agreements on these issues.
Each parameter specification requires an agreement about
verification. Appropriate information is summarized in Section 5.
Available standard test methods elaborated by SEMI, ASTM, and DIN
are referenced in Section 3.
A number of the required standard test methods do not exist at
present. This document is expected to serve as a guideline and
incentive for qualified ASTM, DIN, JEITA, and SEMI committees to
develop the missing standard procedures. Conversely, if at present
more than one standard test method for verification of a specific
parameter exists (see Table 1), a global consensus procedure
towards selecting or generating a unique standard is advocated.
The geometrical properties of wafers, in particular orientation,
diameter, thickness, flatness and edge rounding, are covered by the
series of SEMI M9 specifications and shall not be addressed
here.
NOTICE: This standard does not purport to
address safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine the
applicability of regulatory or other limitations prior to use.
Purpose
Substrates with high electrical resistivity and electron drift
mobility are needed to fabricate high performance digital and
analog microelectronic devices and circuits. Semi-insulating n-type
Gallium Arsenide, henceforth termed SI GaAs, has been established
worldwide as a preferred substrate material for such
applications.
The active layers needed for devices are generated either by ion
implantation or by epitaxy. The quality of these layers, and hence
the performance, yield and reliability of devices, strongly depends
on the bulk and surface quality of the substrate.
This document provides a basis for specifying the material
parameters of SI GaAs to support ordering agreements between
suppliers and purchasers.
About IHS
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