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SEMI MF928 Document Information:
Title
TEST METHODS FOR EDGE CONTOUR OF CIRCULAR SEMICONDUCTOR WAFERS AND RIGID DISK SUBSTRATES
Semiconductor Equipment and Materials International
Publication Date:
Mar 1, 2005
Scope:
These test methods provide means for examining the edge contour
of circular wafers of silicon, gallium arsenide, and other
electronic materials, and determining fit to limits of contour
specified by a template that defines a permitted zone through which
the contour must pass. Principal application of such a template is
intended for, but not limited to, wafers that have been
deliberately edge shaped.
NOTE 1: DIN 50441/2 is equivalent to Method B of this standard.
It is the responsibility of DIN Committee NMP 221. DIN 50441/2,
Measurement of the Geometric Dimensions of Semiconductor Slices;
Testing of Edge Rounding, is available from Beuth Verlag GmbH,
Burggrafenstrasse 6, 10787 Berlin, Germany, Telephone:
49.30.2601-0, Fax: 49.30.2601.1263, Website: www.beuth.de.
Two test methods are described.
Method A is destructive and is limited to inspection of discrete
points on the periphery, including flats. The contour of
deliberately edge-shaped wafers may not be uniform around the
entire periphery, and thus the discrete location(s) may or may not
be representative of the entire periphery.
Method A is recommended for examining the edge profile of
flatted regions of the wafer.
Method A is best suited for referee purposes.
Method B is nondestructive and suitable for inspection of all
points on the wafer periphery except flats.
Method B is appropriate for routine process monitoring such as
alignment of wafer edge grinders, routine quality control and
incoming/outgoing inspection purposes. In view of the uncertainty
of precisely locating the intersection of the contour and the wafer
surface when carrying out Method B, use of this method for
commercial transactions is not recommended unless the parties to
the test establish the degree of correlation that can be
obtained.
Method B may also be applied to the examination of the edge
contour of the outer periphery of substrates for rigid disks used
for magnetic storage of data; metallic rigid disk substrates cannot
conveniently be cleaved.
NOTE 2: Reference to wafers in the remainder of this standard
shall be interpreted to include substrates for rigid disks unless
the phrase "of electronic materials" is also included in the
context.
The values stated in SI units are to be regarded as the
standard. The values given in parentheses are for information
only.
NOTICE: This standard does not purport to
address safety issues, if any, associated with its use. It is the
responsibility of the user of this standard to establish
appropriate safety and health guides and determine the
applicability of regulatory or other limitations prior to use.
Purpose
The edges of circular wafers of electronic materials are
frequently required to be shaped after cutting the wafers from the
ingot. Contouring the wafer edge reduces the incidence of chipping
and minimizes epitaxial edge crown and photoresist edge bead during
subsequent processing of the wafer. Similarly, edges of rigid disk
substrates are frequently edge shaped.
The test methods described here provide means to determine that
the wafer edge contour is appropriate to meet specifications, such
as SEMI M1 or SEMI M9, which are intended to provide wafers
avoiding the difficulties enumerated above.
Keywords:
- Contour
- edge contour
- gallium arsenide
- optical comparator
- projection microscope
- rigid disk
- semiconductor
- silicon
- wafer
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